Numerical computation of spin-transfer torques for antiferromagnetic domain walls
نویسندگان
چکیده
منابع مشابه
Spin-transfer torques in antiferromagnetic metals from first principles.
In spite of the absence of a macroscopic magnetic moment, an antiferromagnet is spin-polarized on an atomic scale. The electric current passing through a conducting antiferromagnet is polarized as well, leading to spin-transfer torques when the order parameter is textured, such as in antiferromagnetic noncollinear spin valves and domain walls. We report a first principles study on the electroni...
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We theoretically investigate the dynamics of antiferromagnetic domain walls driven by spin-orbit torques in antiferromagnet-heavy-metal bilayers. We show that spin-orbit torques drive antiferromagnetic domain walls much faster than ferromagnetic domain walls. As the domain wall velocity approaches the maximum spin-wave group velocity, the domain wall undergoes Lorentz contraction and emits spin...
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This tutorial article introduces the physics of spin transfer torques in magnetic devices. We provide an elementary discussion of the mechanism of spin transfer torque, and review the theoretical and experimental progress in this field. Our intention is to be accessible to beginning graduate students. This is the introductory paper for a cluster of “Current Perspectives” articles on spin transf...
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This tutorial article introduces the physics of spin transfer torques in magnetic devices. Our intention is that it be accessible to beginning graduate students. We provide an elementary discussion of the mechanism of spin transfer torque and review the theoretical and experimental progress in this field. This article is meant to set the stage for the articles which follow in this volume of the...
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Ferroic materials, such as ferromagnetic or ferroelectric materials, have been utilized as recording media for memory devices. A recent trend for downsizing, however, requires an alternative, because ferroic orders tend to become unstable for miniaturization. The domain wall nanoelectronics is a new developing direction for next-generation devices, in which atomic domain walls, rather than conv...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2020
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.101.144431